For the first time, a microwave intermodulation
technique is used to measure the mechanical resonance directly on packaged
and unpackaged RF MEMS capacitive switches with quality factors approaching
unity due to air damping. The result is validated by similar measurements
in vacuum with much higher quality factors. From the measured resonance
frequencies, the residual mechanical stress of the fixed-fixed membrane
of the switches is derived and its temperature dependence is analyzed
and correlated with that of the pull-in voltage. The present technique
offers a convenient means for monitoring the residual stress in RF MEMS
devices in both manufacturing and operation. It also allows mechanical
and electrical degradation effects to be conveniently separated during
life testing of the switches.
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